Wenwen Zhao

Wenwen Zhao

I am an Assistant Professor with the Department of Electrical, Computer and Systems Engineering at Rensselaer Polytechnic Institute (RPI).

Publications

Selected Publications

My research focuses on wide-bandgap semiconductors, acoustic-electronic integration, and high-frequency device physics. For a complete list of my publications, please visit my Google Scholar profile.

Journal Publications

  • W. Zhao, K. Nomoto, C. Savant, J. Encomendero, H. K. P., X. Tong, T. Li, M. Verma, R. Singh, R. Chaudhuri, H. X. Tang, D. A. Muller, J. C. M. Hwang, H. G. Xing, and D. Jena, “BAWFET: monolithic integration of RF amplifiers and RF filters for active filtering,” incoming.
  • W. Zhao, R. Singh, S. Vishwakarma, J. Encomendero, K. Nomoto, L. Li, D. J. Smith, J. C. M. Hwang, H. G. Xing, and D. Jena, “Performance limiting factors of Ku-band FBARs,” IEEE Transactions on Electron Devices, vol. 71, no. 8, pp. 4968–4976, 2024.
  • W. Zhao, M. J. Asadi, L. Li, R. Chaudhuri, K. Nomoto, H. G. Xing, J. C. M. Hwang, and D. Jena, “15-GHz epitaxial AlN FBARs on SiC substrates,” IEEE Electron Device Letters, vol. 44, no. 6, pp. 903–906, 2023.
  • W. Zhao, M. J. Asadi, L. Li, R. Chaudhuri, K. Nomoto, H. G. Xing, J. C. M. Hwang, and D. Jena, “X-band epi-BAW resonators,” Journal of Applied Physics, vol. 132, no. 2, p. 024503, 2022.

Conference Proceedings

  • W. Zhao, K. Nomoto, J. Encomendero, C. Savant, K. P. Harikrishnan, X. Tong, T. Li, M. Verma, R. Singh, R. Chaudhuri, D. A. Muller, H. X. Tang, J. C. M. Hwang, H. G. Xing and D. Jena, “BAWFET: A Monolithically Integrated RF FET Amplifier + BAW Filter on a Multifunctional AlN Platform,” Device Research Conference (DRC), 2025.
  • W. Zhao, K. Nomoto, C. Savant, H. K. P., R. Chaudhuri, H. G. Xing, and D. Jena, “BAWFET: Monolithic integration of Nitride HEMT with a BAW for active filtering,” International Workshop on Nitride Semiconductors (IWN), 2024.
  • T. S. Nguyen, K. Nomoto, W. Zhao, C. Savant, H. G. Xing, and D. Jena, “Strain-balanced AlScN/GaN HEMTs with fT / fMAX of 173/321 GHz,” IEEE International Electron Devices Meeting (IEDM), 2024.
  • W. Zhao, J. Encomendero, K. Nomoto, L. Li, J. C. M. Hwang, H. G. Xing, and D. Jena, “Temperature dependent properties of 15-GHz epitaxial AlN FBARs,” Device Research Conference (DRC), 2023.
  • W. Zhao, M. J. Asadi, L. Li, R. Chaudhuri, K. Nomoto, H. G. Xing, J. C. M. Hwang, and D. Jena, “10 GHz epi-AlN BAW resonators,” MRS Spring Meeting, 2022.
  • M. J. Asadi, L. Li, W. Zhao, K. Nomoto, P. Fay, H. G. Xing, D. Jena, and J. C. M. Hwang, “Substrate-integrated waveguides for monolithic integrated circuits above 110 GHz,” IEEE MTT-S International Microwave Symposium (IMS), 2021.
  • W. Zhao, M. J. Asadi, L. Li, R. Chaudhuri, K. Nomoto, H. G. Xing, J. C. M. Hwang, and D. Jena, “Overcoming acoustoelectric material limits of piezoelectric resonators using epitaxial aluminum nitride,” Bulletin of the American Physical Society, 2021.

Pantents

  • W. Zhao, H. G. Xing and D. Jena, “BAWFET: A Monolithically Integrated RF FET Amplifier and BAW Filter on a Multifunctional AlN Platform,” Application number 63/812,392, provisional patent filed in June 2025.