Reprints (*)

2018 J.H. Park et al. (ACS-EL) Fundamental limitations of wide-bandgap semiconductors for LEDs
2018 J.Y. Tsao et al. (MRS-E&S) Electrification of energy: Longterm trends and opportunities

2017 J. Cho et al. (L&PR) White light-emitting diodes: History, progress and future
2017 J.H. Park et al. (Energies) Effect of imbalanced carrier transport on the efficiency droop in GaInN Blue & Green LEDs

2016 K Kim et al. (APL) Energy bandgap variation in oblique angle deposited indium tin oxide (ITO)
2016 JW Lee et al. (Nature-Scientific-Reports) Eegant route to overcome fundamentally-limited light extraction in AlGaN deep-UV LEDs
2016 JW Lee et al. (ACS-Photonics) Arrays of truncated-cone AlGaN DUV LEDs facilitating outcoupling of in-plane emission
2016 TH Lee et al. (ACS-AMI) Glass-based transparent conductive electrode: Its application to Visible-to-UV LEDs
2016 JH Park et al. (JAP) Variation of EQE with temperature & current density in red, blue & deep UV LEDs

2015 J Cho et al. (JJAP) GaInN-based LEDs embedded with wire-grid polarizers
2015 GB Lin et al. (ACS Photonics) Onset of the efficiency droop in GaInN QW LEDs under PL and EL excitation
2015 GB Lin et al. (APEX) Effect of a p-type ZnO insertion layer on the external quantum efficiency of GaInN LEDs
2015 GB Lin et al. (C-Appl-Phys) Beneficial effects of a p-type GaInN spacer layer on the efficiency of GaInN-GaN LEDs
2015 DY Kim et al. (IEEE-PJ) Polarization-engineered high-efficiency GaInN LEDs optimized by genetic algorithm
2015 DY Kim et al. (LSA) Overcoming light-extraction limitations of deep-UV LEDs by utilizing transverse-magnetic dominant emission
2015 JH Park et al. (OE) Distinct U-shape efficiency-versus-current-curves in AlGaN-based deep-UV LEDs
2015 AK Sood et al. (Nova-Science-Publishers) Nano-structured AR-coatings for optoelectronic applications

2014 M. Coltrin et al. (J-Phys-Chem) Solid-state lighting: Exploring new materials, architectures, and light emission phenomena
2014 H. Kwon et al. (Advanced Energy Materials) 3D nanostructured ITO electrodes for enhanced performance of bulk heterojunction organic solar cells
2014 M. Ma et al. (JVST-A) Fabrication of tapered graded-refractive-index micropillars using ion-implanted photoresist as an etch mask
2014 D. Meyaard et al. (ECS-SSLetters) Mesa-free III-V nitride LEDs with flat surface
2014 S.-H. Lee et al. (Optics-Express) Enhanced efficiency of QD sensitized solar cells with near single-crystalline TiO2 nanohelixes used as photoanodes
2014 S.-H. Lee et al. (Solar Energy Materials & Cells) Enhanced efficiency of dye-sensitized solar cells with photoanodes based on TiO2 nano-helix array
2014 G.-B. Lin et al. (APL) "U-turn" feature in the efficiency-versus-current curve of GaInN-GaN LEDs

2013 Jaehee Cho et al. (Laser & Photonics Reviews) Efficiency droop in LEDs: Challenges and countermeasures
2013 Seung Cheol Han et al. (J Nanaosci & Nanotech) Ohmic contacts to N-face p-type GaN using Ni-Au for the fabrication of polarization-inverted LEDs
2013 Hee-Dong Kim et al. (Adv-Funct-Mat) A universal method of producing transparent electrodes using wide-bandgap materials
2013 Guan-Bo Lin et al. (IEEE-PJ) Effect of quantum barrier thickness in the MQW active region of GaInN-GaN LEDs
2013 Ming Ma et al. (J Mater Chem C) Optically functional surface structures for GaN-based LEDs
2013 David Meyaard et al. (APL) Identifying the cause of the efficiency droop in GaInN LEDs by correlating the onset of high injection with onset of the droop
2013 David Meyaard et al. (APL) Analysis of the temperature dependence of the forward-voltage characteristics of GaInN LEDs
2013 David Meyaard et al. (APL) GaInN LEDs using separate epitaxial growth for the p-type region to attain polarization-inverted EBL
2013 Seung Jae Oh et al. (Optics Express) Enhanced performance of polycrystalline Si solar cells using discrete multilayer AR coatings
2013 Seung Jae Oh et al. (J-Mat-Chem-C) Enhanced phosphor-conversion efficiency of GaN-based white LEDs having dichroic-filtering contacts
2013 Jun-Hyuk Park et al. (APL) Enhanced efficiency of GaInN-based LEDs with reduced efficiency droop by Al-composition-graded AlGaN-GaN SL EBL
2013 Roger E. Welser et al. (MRS) Nanostructured transparent conductive oxides for photovoltaic applications

2012 Guan-Bo Lin et al. (APL) Analytic model for efficiency droop based on drift-induced reduction of injection efficiency
2012 Guan-Bo Lin et al. (APL) Method for determining radiative efficiency of GaInN QWs based on width of efficiency-vs-n curve
2012 Ming Ma et al. (Optics Express) Emission pattern control and polarized light emission through graded index coatings on GaInN LEDs
2012 Ming Ma et al. (APL) Polarized light emission from GaInN LED embedded with subwavelength Al wire-grid polarizers
2012 Ming Ma et al. (APL) Light-extraction enhancement in GaInN LEDs patterned with TiO2 micro-pillars with tapered sidewalls
2012 David Meyaard et al. (APL) Temperature dependent efficiency droop in GaInN LEDs with different current densities
2012 Frank Mont et al. (PSS) Enhanced light extraction from GaN waveguide using micro pillar TiO2-SiO2 graded-index layers
2012 David Poxson et al. (ACS Appl. Mat. & Interfaces) Tailored nanoporous coatings fabricated on conformable polymer substrates
2012 Qifeng Shan et al. (JAP) Analysis of parasitic cyan luminescence occurring in GaInN blue LEDs
2012 Jong-In Shim et al. (APL) Efficiency droop in AlGaInP and GaInN LEDs
2012 Adam Sood et al. (JNN) Study of optical and electrical properties of nanostructured ITO fabricated by oblique angle deposition
2012 Ashok Sood et al. (SPIE) Development of large-area nanostructure antireflection coatings for EO & IR sensor applications
2012 Xing Yan et al. (Adv. Func. Mat.) Enhanced performance of solar cells using multiple-discrete-layer AR coatings
2012 Di Zhu et al. (APEX) Genetic Algorithm for innovative device designs in high-efficiency III-V nitride LEDs

2011 Sameer Chhajed et al. (PSS) Temperature dependent light-output characteristics of GaInN LEDs with different dislocation densities
2011 Sameer Chhajed et al. (APL) Strong light-extraction enhancement in GaInN LEDs using self-organized nanoscale patterning of p-type GaN
2011 Sameer Chhajed et al. (APEX) Nanostructured multilayer tailored refractive index AR coating for glass with broadband and omnidirectional characteristics
2011 Qi Dai et al. (APL) On the symmetry of efficiency-vs-carrier-concentration curves in GaInN/GaN LEDs and relation to droop-causing mechanisms
2011 Guan-Bo Lin et al. (JSID) A complementary matching technique to reduce variance of optical and electrical properties of LEDs
2011 Sunyong Hwang et al. (APL) Promotion of hole injection enabled by GaInN light-emitting triodes and effect on efficiency droop
2011 David Meyaard et al. (APL) On the temperature dependence of electron leakage from active region of GaInN GaN LEDs
2011 David Meyaard et al. (APL) Asymmetry of carrier transport leading to efficiency droop in GaInN based LEDs
2011 Ming Ma et al. (OptExp) Effects of the refractive index of the encapsulant on the LEE of LEDs
2011 An Mao et al. (APL) Characteristics of dotlike green satellite emission in GaInN LEDs
2011 Ahmed Noemaun et al. (JVST-A) Inductively coupled plasma etching of graded-index layers of TiO2 and SiO2 using ITO hard mask
2011 Ahmed Noemaun et al. (JAP) Optically functional surface composed of patterned graded-refractive-index coatings to enhance light extraction of GaInN LEDs
2011 David Poxson et al. (MRS) High-performance AR coatings utilizing nanoporous layers
2011 Qifeng Shan et al. (APL) Transport-mechanism analysis of the reverse leakage current in GaInN LEDs
2011 Jiuru Xu et al. (APL) Effects of polarization-field tuning in GaInN LEDs
2011 Xing Yan et al. (JAP) Electrically conductive thin film color filters made of single-material ITO

2010 Jaehee Cho et al. (Electronics Letters) Analysis of reverse tunneling current in GaInN LEDs
2010 Qi Dai et al. (APL) Carrier recombination mechanisms and efficiency droop in GaInN-GaN LEDs
2010 Wonseok Lee et al. (J Appl Phys) Growth and characteristics of GaInN/GaInN multiple quantum well LEDs
2010 Ming Ma et al. (JAP) Enhancement of photovoltaic cell response due to high-refractive-index encapsulants
2010 David J Poxson et al. (Optics Express) Demonstration of optical interference filters utilizing tunable refractive index layers.pdf
2010 Martin F Schubert et al. (APL) Effect of polarization charges and well width upon capture and dwell time for carriers above GaInN GaN QWs
2010 Martin F Schubert et al. (APEX) AR coatings consisting of multiple discrete layers and comparison with continuously graded AR coatings
2010 EFSchubert SYLin CMWetzel RPI FC-Constellation Newsletter December-2010 edition
2010 Qifeng Shan et al. (JAP) Analysis of thermal properties of GaInN LEDs and LDs
2010 Di Zhu et al. (APL) Enhanced electron capture and symmetrized carrier distribution in GaInN LEDs having tailored barrier doping

2009 Cho J et al. (Electronics Letters) Effect of chip geometry on breakdown voltage of GaInN LEDs
2009 Cho Jaehee et al. (PSS) Color tunable LEDs with modified pulse-width modulation
2009 Chung HJ et al. (APL) Improved performance of GaN-based blue LEDs with InGaN-GaN multilayer barriers
2009 Dai Qi et al. (APL) IQE and nonradiative recombination coefficient of GaInN-GaN MQWs with different dislocation densities
2009 Lee YJ et al. (APL) High output power density from GaN-based 2D nanorod LED arrays
2009 Mirhosseini Roya et al. (Optics Express) Improved color rendering and luminous efficacy in white LEDs by dual blue active region
2009 Poxson David J et al. (Optics Letters) Broadband omnidirectional antireflection coatings optimized by genetic algorithm
2009 Schubert MF et al. (APL) On resonant optical excitation and carrier escape in GaInN-GaN quantum wells
2009 Schubert MF et al. (APL) Electroluminescence induced by photoluminescence excitation in GaInN-GaN LEDs
2009 Xu J et al. (APL) Reduction in efficiency droop in polarization matched GaInN/GaInN LEDs
2009 Yan Xing et al. (JJAP) Refractive-index matched indium-tin-oxide electrodes for LCDs
2009 Zhu Di et al. (APL) The origin of the high diode ideality factors in GaInN GaN multiple quantum well LEDs

2008 Chen KX et al. (APL) Effect of dislocations on electrical and optical properties of n-type AlGaN
2008 Chhajed S (APL) Nanostructured multilayer graded-index AR coating for Si solar cells with broadband and omnidirectional characteristics
2008 Kim JK and Schubert EF (OpticsExpress) Transcending the replacement paradigm of solid-state lighting
2008 Kim JK (APL) Elimination of total internal reflection in GaInN LEDs by graded-refractive-index micropillars
2008 Kim JK (Advanced Materials) Light extraction enhancement of GaInN LEDs by graded refractive index ITO anti-reflection contact
2008 Kim JK (Science Magazine) Editors' Choice
2008 Mont FW et al. (JAP) High-refractive-index TiO2 nanoparticle-loaded encapsulants for LEDs
2008 Poxson DJ et al. (APL) Quantification of porosity and deposition rate of nanoporous films grown by oblique-angle deposition
2008 Schubert MF et al. (Optics-Express) Design of multilayer anti-reflection coatings made from co-sputtered and low-refractive-index materials by genetic algorithm
2008 Schubert MF et al. (APL) Polarization matched GaInN / AlGaInN MQW LEDs with reduced efficiency droop

2007 Chen KX et al. (APL) Sub band gap emission from native defects in Si doped AlGaN
2007 Chen KX et al. (JAP) Recombination dynamics in UV LEDs with Si doped AlGaN-AlGaN MQW active region
2007 Kim MH et al. (APL) Origin of efficiency droop in GaN based LEDs
2007 Kim JK et al. (SPIE-Newsroom) Thin film coatings that reflect virtually no light
2007 Jung, Helmut (Compound Semiconductors) A life in research - The impact of Klaus Ploog
2007 Schubert MF et al.(OpticsExpress) Linearly polarized emission from GaInN LEDs with polarization-enhancing reflector
2007 Schubert MF et al. (OptExp) Encapsulation designed for extraction of polarized light from unpolarized sources
2007 Schubert MF et al. (APL) Polarization of light emission by 460nm GaInN-GaN LEDs
2007 Schubert MF et al. (APL) DBR consisting of high- and low-refractive-index thin film layers made of same material
2007 Schubert MF et al. (APL) Effect of dislocation density on efficiency droop in GaInN-GaN LEDs
2007 Schubert EF et al. (PSS) Low-refractive-index materials - A new class of optical thin-film materials
2007 Schubert EF et al. (Nature Photonics March issue) Interview on anti-reflection coating made of low-index material
2007 Schubert EF and Kim JK (Compound Semiconductors) 100 years of LEDs
2007 Xi JQ (Science News) Nanoscale coating reflects almost no light
2007 Xi JQ et al. (Nature Photonics) Thin film with low refractive index for broadband elimination of Fresnel reflection
2007 R&D Magazine Award for Graded-index anti-reflection coating
2007 Xi YA et al. (APL) Kinetic study of Al-mole fraction in AlGaN grown by MOVPE
2007 Xi YA et al. (J Cryst Growth) N-type AlGaN grown on sapphire by using a superlattice and low-T AlN interlayer
2007 Xi YA et al. (JEM) Optimization of high quality AlN epitaxial layers

2006 Kim et al. (APL) Enhanced light-extraction in GaInN near-UV LED with Al-based ODR
2006 Kim et al. (J Electrochem Soc) GaN Light-Emitting Triodes for high-efficiency hole injection
2006 Kim et al. (APL) GaInN LED with conductive omnidirectional reflector having a low-refractive-index ITO layer
2006 Kim et al. (J Electrochem Soc) Light extraction in GaInN LEDs using diffuse omnidirectional reflector
2006 Kim et al. (SPIE Proc 6134) GaN light-emitting triodes for high-efficiency hole injection
2006 Kim et al. (SPIE Proc 6134) Omni-directional reflectors for light-emitting diodes
2006 Kim et al. (Photonics Spectra 40 April 2006) Low-refractive-index nanorod layer improves LED efficiency
2006 Luo H et al. (APL) Trapped whispering-gallery modes in white LEDs with remote phosphor
2006 Schubert et al. (Rep Prog Phys) Solid-state lighting - A benevolent technology
2006 Shah et al. (MRS Proc) Reduction of base access resistance in AlGaN HBTs using GaInN cap
2006 Xi JQ et al. (IEEE PTL) Enhanced light extraction in GaInN LED with pyramid reflector
2006 Xi JQ et al. (Optics Letters) Very low-refractive-index optical thin films consisting of an array of SiO2 nanorods
2006 Xi JQ et al. (Photonics Spectra 40 April 2006) Nanorods form thin film with ultralow refractive index
2006 Xi JQ et al. (Laser Focus World 42 March 2006) Nanorods and air make low-index film
2006 Xi YA et al. (JVST-A) Quantitative assessment of diffusivity of roughened surfaces for LEDs
2006 Xi YA et al. (APL) High quality AlN on sapphire by MOCVD

2005 Chhajed et al. (JAP) Influence of Tj on chromaticity and CRI of trichromatic white-light sources based on LEDs
2005 Chhajed et al. (SPIE Photonics West) Junction temperature in LEDs
2005 Furis et al. (APL) Spectral and temporal resolution of recombination from multiple excitation states in AlGaN-GaN MQWs
2005 Kim et al. (JJAP-Express Letters) White LED with remote phosphor configuration
2005 Luo et al. (APL) Analysis of high-power packages for phosphor-based white LEDs
2005 Ramaiah, Bhat et al. (JAP) SiC epi layers on Si- and C-face 4H SiC substrates by chemical-vapor deposition
2005 Schubert and Kim (Science) Solid-state light sources getting smart
2005 Schubert et al. (Encyclopedia of Chemical Technology) Light Emitting Diodes
2005 Xi JQ et al. (Optics Letters) ODR using nanoporous SiO2 as a low-refractive-index material
2005 Xi JQ et al. (Nano Letters) Silica nanorod-array films with very low refractive indices
2005 Xi JQ et al. (APL) Internal high-reflectivity omni-directional reflectors
2005 Xi JQ et al. (LEOS Newsletter) Low-refractive-index films - A new class of optical materials
2005 Xi Y et al. (Jpn JAP) Junction temperature in UV LEDs
2005 Xi Y et al. (APL) Junction temperature in deep UV LEDs (RPI-Sandia)

2004 Gessmann and Schubert (JAP) High-efficiency AlGaInP LEDs for SSL applications
2004 Kim et al. (APL) P-type conductivity in bulk AlGaN and AlGaN-AlGaN SLs
2004 Kim et al. (APL) GaInN LEDs with RuO2-SiO2-Ag omni-directional reflector
2004 Schubert (Patent US 6 784 462) LED with planar omni-directional reflector
2004 Xi Y and Schubert (APL) Junction-temperature in GaN UV LEDs using Vf

2003 Gessmann et al. (SPIE PW) AlGaInP light-emitting diodes with omni-directionally reflecting submount
2003 Gessmann et al. (SPIE PW) GaInN light-emitting diodes with omni directional reflectors
2003 Gessmann et al. (IEEE EDL) Omni-directional reflective contacts for LEDs
2003 Li et al. (JAP) Carrier dynamics in nitride-based light-emitting pn junction diodes with two active regions emitting at different wavelengths
2003 Shah et al. (JAP) Experimental analysis and theoretical model for anomalously high ideality factors in AlGaN-GaN p-n junction diodes
2003 Waldron et al. (PRB) Multisubband photoluminescence in p-type modulation-doped AlGaN-GaN superlattices
2003 Waldron et al. (APL) Experimental study of perpendicular transport in weakly coupled AlGaN-GaN SLs

2002 Chernyak et al. (APL) Influence of electron injection on performance of GaN photodetectors
2002 Gessmann et al. (JAP) Ohmic contact technology in III nitrides using polarization effects of cap layers
2002 Gessmann et al. (APL) Ohmic contacts to p-type GaN mediated by polarization fields in thin InGaN capping layers
2002 Gessmann et al. (J Elec Materials) Ohmic contacts to p-GaN using InGaN capping layers

2001 Chernyak et al. (IEEE) Minority electron anisotropy in p-type AlGaN-GaN superlattices
2001 Guo et al. (APL) Efficiency of GaN-InGaN LEDs with interdigitated mesa geometry
2001 Guo & Schubert (APL) Current crowding and optical saturation effects in GaInN-GaN LEDs grown on insulating substrates
2001 Guo & Schubert (JAP) Current crowding in GaN-InGaN LEDs on insulating substrates
2001 Li et al. (Phys Stat Sol) Novel polarization-enhanced ohmic contacts to n-type GaN
2001 Schubert & Stocker (US 6,294,475) Crystallographic wet chemical etching of III-nitride material
2001 Waldron et al. (Phys Stat Sol) Influence of doping profiles on p-type AlGaN-GaN superlattices
2001 Waldron et al. (APL) Improved mobilities and resistivities in modulation doped AlGaN-GaN superlattices

2000 Chernyak et al. (APL) Electron beam induced increase in diffusion length in p-type GaN and AlGaN-GaN superlattices
2000 Goepfert et al. (JAP) Experimental and theoretical study of acceptor activation and transport properties in p-type AlGaN-GaN superlattices
2000 Graff et al. (Cornell Conf) On the reduction of base resistance in GaN-based heterojunction bipolar transistors
2000 Graff and Schubert (Sensors & Actuators) Flat free-standing silicon diaphragms using silicon-on-insulator wafers
2000 Guo et al. (IEEE-IEDM) Photon recycling semiconductor LED
2000 Guo et al. (Compound Semicondutor) Photon recycling for high-brightness LEDs
2000 Li et al. (APL) Low resistance ohmic contacts to p-type GaN
2000 Stocker et al. (APL) Optically pumped InGaN-GaN lasers with wet-etched facets
2000 Stocker et al. (JElectrochemSoc) Crystallographic wet chemical etching of p-type GaN
2000 Waldron et al. (MRS) Polarization effects in AlGaN-GaN superlattices

1999 Guo et al. (IEDM) Photon recycling semiconductor light emitting diode
1999 Goepfert et al. (Electron Lett) Demonstration of efficient p-type doping in AlGaN-GaN superlattice structures
1999 Schubert (US patent) Semiconductor having enhanced acceptor activation

1998 Stocker et al. (APL) Crystallographic wet chemical etching of GaN
1998 Stocker et al. (APL) Facet roughness analysis for InGaN-GaN lasers with cleaved facets
1998 Tu et al. (APL) Yellow luminescence depth profiling on GaN epifilms using reactive ion etching
1998 Tu et al. (PRB) Spatial distributions of near-band-gap UV and yellow emission on MOCVD grown GaN epifilms

1997 Billeb et al. (APL) Microcavity effects in GaN epitaxial films and in Ag or GaN or Sapphire structures
1997 Fan Joannopoulos et al. (PRL) High extraction efficiency of spontaneous emission from slabs of photonic crystals
1997 Peng et al. (APL) Band gap bowing and refractive index spectra of polycrystalline AlInN films deposited by sputtering
1997 Schubert Goepfert Redwing (APL) Evidence of compensating centers as origin of yellow luminescence in GaN
1997 Schubert Redwing et al. (APL) Optical properties of Si-doped GaN

1996 Grieshaber et al. (JAP) Competition between band gap and yellow luminescence in GaN and relevance for devices
1996 Schubert Grieshaber Goepfert (APL) Enhancement of deep acceptor activation in semiconductors by superlattice doping
1996 Schubert et al. (IEEE J Lightwave Tech) Modulation characteristics of RCLEDs

1995 Passlack et al. (APL) In situ fabricated Ga2O3-GaAs structures with low interface recombination velocity
1995 Schubert et al. (APL) Phenomenology of Zn diffusion and incorporation InP grown by OMVPE
1995 Tu et al. (APL) Superior output linearity of optimized DH vertical-cavity top-emitting lasers

1994 Passlack et al. (APL) Dielectric properties of e-beam deposited Ga2O3 films
1994 Schubert et al. (Science) Highly efficient light-emitting diodes with microcavities
1994 Schubert et al. (APL) Si delta-doping of 011 oriented GaAs and AlGaAs grown by MBE
1994 Schubert et al. (APL) Properties of Al2O3 optical coatings on GaAs produced by oxidation of epitaxial AlAs-GaAs films

1993 Hunt et al. (APL) Increased fiber communications bandwidth from an RCLED emitting at 940 nm
1993 Hunt et al. (APL) A resonant-cavity pin photodetector utilizing an e-beam evaporated Si-SiO2 microcavity
1993 Kopf et al. (JAP) Modification of GaAs-AlGaAs growth-interrupted interfaces through changes in ambient conditions
1993 Schubert et al. (APL) Enhanced photoluminescence by resonant absorption in Er-doped SiO2-Si microcavities
1993 Vredenberg et al. (PRL) Controlled atomic spontaneous emission from Er3+ in a transparent Si-SiO2 microcavity

1992 Hunt et al. (Electron Lett) Power and efficiency limits in single mirror LEDs with enhanced intensity
1992 Hunt et al. (APL) Enhanced spectral power density and reduced linewidth at 1300 nm in an InGaAsP QW RCLED
1992 Kopf et al. (APL) P- and n-type dopant profiles in DBR structures and their effect on resistance
1992 Schubert et al. (APL) Giant enhancement of luminescence intensity in Er-doped Si-SiO2 resonant cavities
1992 Schubert et al. (APL) Elimination of heterojunction band discontinuities by modulation doping
1992 Schubert et al. (APL) Resonant cavity light emitting diode
1992 Tsang et al. (APL) Doping in semiconductors with variable activation energy - A new concept and demonstration

1991 Kopf et al. (APL) Photoluminescence of GaAs quantum wells grown by MBE with growth interruptions
1991 Pfeiffer et al. (APL) Si dopant migration and the AlGaAs-GaAs inverted interface
1991 Tu et al. (APL) Transparent conductive metal-oxide contacts in vertical-injection top-emitting QW lasers

1990 Deppe et al. (APL) Quarter-wave Bragg reflector stack of InP-InGaAs for 1650 nm wavelength
1990 Gossmann et al. (APL) Low temperature Si MBE - Solution to the doping problem
1990 Schubert (JVST) Delta doping of III-V compound semiconductors - Fundamentals and device applications
1990 Schubert et al. (APL) Low threshold VCSEL with metallic reflectors
1990 Schubert et al. (APL) Observation of charge storage and intra-subband relaxation in resonant tunneling via a high sensitivity capacitance technique
1990 Schubert et al. (APL) SIMS on delta-doped GaAs grown by MBE
1990 Schubert et al. (JAP) Be delta-doping of GaAs grown by MBE
1990 Schubert et al. (PRB) Fermi-level-pinning induced dopant redistribution in semiconductors during growth by MBE
1990 Tu et al. (APL) VCSELs with semitransparent metallic mirrors and high quantum efficiencies

1989 Deppe et al. (JAP) AlGaAs-GaAs and AlGaAs-GaAs-InGaAs VCSELs with Ag mirrors
1989 Glass et al. (APL) A novel photo-voltaic delta-doped GaAs SL structure
1989 Hobson et al. (APL) Zinc delta-doping of GaAs by OMVPE
1989 Schubert et al. (APL) Diffusion and drift of Si-dopants in delta-doped n-type AlGaAs
1989 Schubert et al. (APL) Dopant distribution for maximum carrier-mobility in selectively doped AlGaAs-GaAs heterostructures
1989 Schubert et al. (APL) Tunable stimulated emission of radiation in GaAs doping SLs
1989 Schubert et al. (PRB) Multi-subband photoluminescence in sawtooth doping SLs
1989 Ullrich et al. (PRB) Transmission spectroscopy on sawtooth doping SLs

1988 Chiu et al. (JAP) Diffusion studies of the Si delta-doped GaAs by CV measurements
1988 Kuo et al. (JAP) Selectively delta-doped QW transistor grown by gas source MBE
1988 Malik et al. (APL) Carbon doping in MBE of GaAs from a heated graphite filament
1988 Schubert et al. (APL) Diffusion of atomic Si in GaAs
1988 Schubert et al. (APL) Minimization of dopant-induced random potential fluctuations in sawtooth doping SLs
1988 Schubert et al. (APL) Spatial localization of impurities in delta-doped GaAs
1988 Schubert et al. (PRB) Quantum-confined interband absorption in GaAs sawtooth doping SLs

1987 Chiu et al. (APL) Chemical beam epitaxial growth of high-purity GaAs using TMGa and arsine
1987 Cunningham et al. (APL) Molecular beam epitaxial growth of high purity AlGaAs
1987 Schubert et al. (APL) Perpendicular electronic transport in doping superlattices
1987 Schubert et al. (APL) Selectively delta-doped AlGaAs-GaAs heterostructures with high 2DEG concentrations
1987 Schubert et al. (PRB) Type A sawtooth doping SL - realization of the Esaki-Tsu type SL
1987 Tsang et al. APL Growth of high-quality GaInAsP by chemical beam epitaxy

1986 Miller et al. (APL) High quality narrow GaInAs-InP QWs grown by atmospheric OMVPE
1986 Schubert et al. (APL) Delta-doped ohmic contacts to n-GaAs
1986 Schubert et al. (APL) Self-aligned enhancement and depletion-mode GaAs FETs employing delta-doping
1986 Schubert et al. (PRB) Photoluminescence line shape of excitons in alloy semiconductors
1986 Tsang et al. (APL) Chemical beam epitaxial growth of extremely high quality GaInAs in InP
1986 Tsang et al. (APL) Extremely high quality GaInAs-InP QWs grown by chemical beam epitaxy

1985 Schubert et al. (APL) GaAs sawtooth superlattice laser emitting at wavelengths greater 900 nm
1985 Schubert et al. (PRB) Electron-impurity tunneling in selectively doped n-AlGaAs-GaAs heterostructures
1985 Schubert et al. (PRB) Radiative electron-hole recombination in a new sawtooth SL grown by MBE

1984 Schubert et al. (PRB) Alloy broadening in photoluminescence spectra of AlGaAs
1984 Schubert et al. (PRB) Shallow and deep donors in direct-gap n-AlGaAs-Si grown by MBE
1984 Schubert et al. (PRB) Transient photoconductivity in selectively doped n-type AlGaAs-GaAs heterostructures

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